Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-02-25
1995-02-14
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257346, 257369, 257607, 257770, 257917, 257900, H01L 2973, H01L 2702
Patent
active
053898095
ABSTRACT:
A process for forming N-channel MOS sources and drains, by implanting both phosphorus and arsenic. The high diffusivity of phosphorus causes it to diffuse in advance of the bulk of the arsenic, so that, after annealing, the source/drain regions have graded regions of gradually decreasing conductivity adjacent to the end of the channels. Thus the electric potential gradient at the ends of the channels is reduced, and impact ionization and hot carrier effects are avoided. The effective radius of the source (or drain) junction is increased, providing increased breakdown voltage. The implantation of both phosphorus and arsenic with the resultant phosphorus peripheral band after annealing is used with self-aligned silicided source/drain regions to prevent silicide spiking through shallow arsenic regions to the P substrate and to prevent source/drain junction consumption during silicidation.
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Ohta et al "Quadruply Self-Aligned MOS (QSA MOS)--A New Short-Channel High-Speed High-Density MOSFET for VLSI" IEEE Trans. Electron Devices vol. ED-27 (Aug. 1980) pp. 1352-1358.
Sunami et al "Characteristics of a Buried Channel, Graded Drain with Punch-Through Stopper (BGP) MOS Device" 1981 Symposium on VLSI Technology, Hawaii (Sep. 1981), Dig. Tech. Papers pp. 20-21.
Takeda et al "Submicron MOSFET Structure for Minimizing Channel Hot-Electron Injection" 1981 Symposium on VLSI Technology, Hawaii (Sep. 1981), Dig. Tech. Papers pp. 22-23.
Streetman, "Fabrication of P-N Junctions", Solid-State Electronic Devices, Seocnd Edition, 1980, pp. 128-136.
Chapman Richard A.
Haken Roger A.
Donaldson Richard L.
Garner Jacqueline J.
Hiller William E.
Munson Gene M.
Texas Instruments Incorporated
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