Trench MOSFET with integrated schottky device and process...

Details Trench MOSFET with integrated schottky device and process... Trench MOSFET with integrated schottky device and process...

2000-10-04

2002-08-13

Meier, Stephen D. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000

Reexamination Certificate

active

06433396

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to an integrated trench type MOSFET and a Schottky diode and a novel process for its manufacture.
BACKGROUND OF THE INVENTION
Integrated MOSFET and Schottky diode structures are well known. When these devices are made with a trench process, both the MOSFET and diode are made with trench structure. The process for making such a device becomes complicated because of the complicated silicon etch and contact sequence. It would be desirable to provide a structure and process for the manufacture of an integrated MOSFET and Schottky diode which requires fewer mask steps than those needed for the integration of a trench MOSFET and trench diode.
BRIEF DESCRIPTION OF THE INVENTION
In accordance with the invention, an integrated structure is provided, using alternating sections of a trench type MOSFET and a planar type of Schottky diode. Thus, the trench type Schottky manufacturing steps required in the prior art are avoided to simplify the device structure and process.


REFERENCES:
patent: 6078090 (2000-06-01), Williams et al.
patent: 348916 (1990-01-01), None

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