Static information storage and retrieval – Read/write circuit – Signals
Patent
1997-03-18
1998-07-28
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Signals
365100, 365148, 365210, 365205, 36518905, 365163, 327 55, 327 56, 327 57, G11C 700, G01R 1900
Patent
active
057870420
ABSTRACT:
To read out a data bit stored in a memory cell including a programmable resistor memory element, a first voltage is developed on a first sense node due to initiation of current flow through the memory element and a second voltage is developed on a second sense node due to current flow through a reference resistor. The first and second voltages are separately detected to generate a trip signal in response to a leading edge of either of the first and second voltages achieving a threshold level. A flip-flop circuit is conditioned by the trip signal to produce opposite logic signal voltages on the first and second sense nodes indicative of the binary value of the stored data bit.
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Micro)n Technology, Inc.
Nelms David C.
Tran Andrew Q.
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