MOS field plate trench transistor device

Details MOS field plate trench transistor device MOS field plate trench transistor device

2008-05-13

2008-05-13

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C257SE29009

Reexamination Certificate

active

07372103

ABSTRACT:
A MOS field plate trench transistor device is disclosed. In one embodiment, in order to obtain a lowest possible on resistance, in the case of a MOS field plate trench transistor device having a body contact hole, it is proposed to form the avalanche breakdown region preferably in an end region of a provided trench structure by virtue of the fact that a mesa region with the body contact region in the semiconductor region as intermediate region in a direction running perpendicular to the first direction and with respect to an adjacent MOS transistor device has a width DMesa, the value of which corresponds to the value of the width DTrenchof the trench structure in this direction or exceeds said value and does not go beyond 1.5 times said value, so that the following holds true: DTrench≦DMesa≦1.5·DTrench. As an alternative, the width DMesais chosen such that the body contact hole precisely still has space, but the breakdown region is in any event shifted into the end region.

REFERENCES:
patent: 6413822 (2002-07-01), Williams et al.
patent: 6882004 (2005-04-01), Zundel et al.
patent: 6911693 (2005-06-01), Zundel et al.
patent: 7253042 (2007-08-01), Disney
patent: 2006/0214222 (2006-09-01), Challa et al.

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