Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2008-06-17
2008-06-17
Mai, Son L (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185110, C365S185170
Reexamination Certificate
active
07388778
ABSTRACT:
A nonvolatile memory array includes first and second blocks of three-state memory cells therein. These first and second blocks are configured to operate individually as first and second blocks of physical memory cells, respectively, and collectively as an additional block of virtual memory cells. The first and second blocks of memory cells and the additional block of virtual memory cells may be read independently to provide a total of three blocks of read data.
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Mai Son L
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
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