Spin-injection magnetic random access memory

Details Spin-injection magnetic random access memory Spin-injection magnetic random access memory

2008-07-01

2008-07-01

Le, Vu A (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S145000

Reexamination Certificate

active

07394684

ABSTRACT:
A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.

REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6751074 (2004-06-01), Inomata et al.
patent: 6958927 (2005-10-01), Nguyen et al.
patent: 6987653 (2006-01-01), Inomata et al.
patent: 7006375 (2006-02-01), Covington
patent: 7119410 (2006-10-01), Saito et al.
patent: 2005/0057960 (2005-03-01), Saito et al.
patent: 2005/0104101 (2005-05-01), Sun et al.
patent: 2005/0185347 (2005-08-01), Inomata et al.
patent: 2007/0097736 (2007-05-01), Inokuchi et al.
U.S. Appl. No. 11/242,906, filed Oct. 5, 2005, Yoshiaki Saito, et al.
U.S. Appl. No. 11/255,101, filed Oct. 21, 2005, Yoshiaki Saito, et al.
U.S. Appl. No. 11/367,483, filed Mar. 6, 2006, Koichiro Inomata, et al.
W.C. Jeong, et al., “Highly Scalable MRAM Using Field Assisted Current Induced Switching”, 2005 Symposium on VLSI Technology Digest of Technical Papers, 10B-1, pp. 184-185.
Yiming Huai, et al., “Observation of Spin-Transfer Switching in Deep Submicron-Sized and Low-Resistance Magnetic Tunnel Junctions”, Applied Physics Letters, vol. 84, No. 16, Apr. 19, 2004, pp. 3118-3120.
U.S. Appl. No. 11/846,040, filed Aug. 28, 2007, Inokuchi, et al.

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