Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2008-06-24
2008-06-24
Deo, Duy-Vu (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S750000, C438S754000, C438S755000
Reexamination Certificate
active
07390754
ABSTRACT:
A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional silicide. Then, a HPM stripping process is performed on the silicon substrate in order to strip the remnant metal.
REFERENCES:
patent: 5427962 (1995-06-01), Sasaki et al.
patent: 2002/0031915 (2002-03-01), Ito
patent: 2004/0259328 (2004-12-01), Ito et al.
patent: 2006/0266737 (2006-11-01), Hanestad et al.
patent: 2006/0284264 (2006-12-01), Taguwa
patent: 2007/0010093 (2007-01-01), Wang et al.
patent: 2001068369 (2001-03-01), None
Fukuda et al. (J. Electrochem. Soc. Abstract, 2000, vol. 147, No. 10).
Hydrogen Peroxide Material Data Sheet (1998, see last page) (7 pages).
Chang Chun-Chieh
Chang Yu-Lan
Chen Yi-Wei
Hsieh Chao-Ching
Hung Tzung-Yu
Dahimene Mahmoud
Deo Duy-Vu
Hsu Winston
United Microelectronics Corp.
LandOfFree
Method of forming a silicide does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a silicide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a silicide will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2814617