Structure and method for making high density mosfet circuits...

Details Structure and method for making high density mosfet circuits... Structure and method for making high density mosfet circuits...

2008-03-04

2008-03-04

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S314000, C257S315000, C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C257S322000, C257S327000, C257S336000, C257S344000, C257S408000, C257S900000, C257S920000

Reexamination Certificate

active

07339230

ABSTRACT:
Embodiments herein present a structure, method, etc. for making high density MOSFET circuits with different height contact lines. The MOSFET circuits include a contact line, a first gate layer situated proximate the contact line, and at least one subsequent gate layer situated over the first gate layer. The contact line includes a height that is less than a combined height of the first gate layer and the subsequent gate layer(s). The MOSFET circuits further include gate spacers situated proximate the gate layers and a single contact line spacer situated proximate the contact line. The gate spacers are taller and thicker than the contact line spacer.

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