Pinned photodiode structure and method of formation

Details Pinned photodiode structure and method of formation Pinned photodiode structure and method of formation

2008-06-17

2008-06-17

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S431000, C257SE31032, C257SE27131

Reexamination Certificate

active

07388241

ABSTRACT:
An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack is provided. A photodiode with a shallow doping profile with respect to the top surface of a substrate and a graded pinned surface layer, self-aligned to a gate stack is provided. These photodiodes exhibit reduced image lag, transfer gate leakage, and photodiode dark current generation.

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