MTJ patterning using free layer wet etching and lift off...

Details MTJ patterning using free layer wet etching and lift off... MTJ patterning using free layer wet etching and lift off...

2008-05-06

2008-05-06

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21665

Reexamination Certificate

active

07368299

ABSTRACT:
Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices, wherein the second magnetic layer or free layer of a magnetic stack may be patterned using a wet etch technique. A cap layer is formed over the free layer after the free layer is patterned. The cap layer is formed using lift-off techniques. To form the cap layer, resist layers are deposited and patterned, and material layers are deposited over the resist layers. Portions of the material layers are removed when the resist is stripped.

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