Etchant with selectivity for doped silicon dioxide over...

Details Etchant with selectivity for doped silicon dioxide over... Etchant with selectivity for doped silicon dioxide over...

2008-01-15

2008-01-15

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000

Reexamination Certificate

active

07319075

ABSTRACT:
A selective dry etch process includes use of an etchant that includes C2HxFy, where x is an integer from three to five, inclusive, where y is an integer from one to three, inclusive, and where x plus y equals six. The etchant etches doped silicon dioxide with selectivity over both undoped silicon dioxide and silicon nitride. Thus, undoped silicon dioxide and silicon nitride may be employed as etch stops in dry etch processes which utilize the C2HxFy-containing etchant. C2HxFymay be employed as either a primary etchant or as an additive to another etchant or etchant mixture.

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