Flash memory device and program method thereof

Details Flash memory device and program method thereof Flash memory device and program method thereof

2008-07-08

2008-07-08

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S189200

Reexamination Certificate

active

07397704

ABSTRACT:
A method of programming a plurality of memory cells in a flash memory device from a first state to a second state includes verifying the plurality of memory cells using a verify voltage having a level increased according to an increase in a program loop number; and programming the plurality of memory cells using a program voltage having an increment decreased according to an increase in the program loop number, wherein the verifying and programming steps constitute a program loop, the program loop being terminated at a point in time when a level of the verify voltage reaches to a voltage range of the second state.

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