Memory cell and programmable logic having ferromagnetic...

Details Memory cell and programmable logic having ferromagnetic... Memory cell and programmable logic having ferromagnetic...

2008-05-27

2008-05-27

Yoha, Connie C. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S158000, C365S171000, C365S173000, C257S421000, C257S030000, C257S317000

Reexamination Certificate

active

07379321

ABSTRACT:
Memory cell structures make use of the extraordinary Hall effect (EHE) for increased data storage capacity. A memory cell has a ferromagnetic structure which includes at least a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer in between the first and the second ferromagnetic layers. The first and the second ferromagnetic layers exhibit perpendicular magnetic anisotropy and have magnetic moments which are set in accordance with one of a plurality of magnetic orientation sets of the ferromagnetic structure, and the ferromagnetic structure exhibits one of a plurality of predetermined extraordinary Hall resistances RHin accordance with the magnetic orientation set. The extraordinary Hall resistance is exhibited between first and second ends of the ferromagnetic structure across a path which intersects a bias current path between third and fourth ends of the ferromagnetic structure.

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