Method and apparatus for operating nonvolatile memory cells...

Details Method and apparatus for operating nonvolatile memory cells... Method and apparatus for operating nonvolatile memory cells...

2008-01-22

2008-01-22

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S068000, C257SE21008, C257S092000, C257S127000, C257S646000, C257S662000

Reexamination Certificate

active

07321145

ABSTRACT:
A nonvolatile memory cell with a charge storage structure is read by measuring current (such as band-to-band current) between the substrate region of the memory cell and at least one of the current carrying nodes of the memory cell. To enhance the operation of the nonvolatile memory cell, the band structure engineering is used to alter the band structure between a bulk part of the device and another part of the device supporting the measurement current.

REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 5814853 (1998-09-01), Chen
patent: 6011725 (2000-01-01), Eitan
patent: 6160286 (2000-12-01), Chi
patent: 6215702 (2001-04-01), Derhacobian et al.
patent: 6404681 (2002-06-01), Hirano
patent: 6487114 (2002-11-01), Jong et al.
patent: 6487121 (2002-11-01), Thurgate et al.
patent: 6509587 (2003-01-01), Sugiyama et al.
patent: 6649492 (2003-11-01), Chu et al.
patent: 6690601 (2004-02-01), Yeh et al.
patent: 6784480 (2004-08-01), Bhattacharyya
Ya-Chin King et al. “Charge-Trap Memory Device Fabricated by Oxidation of Si1-xGex” IEEE Tranactions on Electron Devices, vol. 48, No. 4, Apr. 2001, pp. 696-700.
Jing Hao Chen et al. “Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfA1O High-k Tunneling and Control Oxides: Device Fabrication and Electrical Performance” IEEE Tranactions on Electron Devices, vol. 51, No. 11, Nov. 2004, pp. 1840-1848.
Guofu Niu “SiGe Technology for Revolution of Personal Communications” http://www.eng.auburn.edu-guofu/sige—intro.htm Sep. 2002, consisting of 5 pages.

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