Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-01-08
2008-01-08
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21175, C438S625000, C438S631000, C438S638000, C438S675000
Reexamination Certificate
active
07317253
ABSTRACT:
A semiconductor device includes a substrate, at least one layer of functional devices formed on the substrate, a first dielectric layer formed over the functional device layer and a first trench/via located in the first dielectric layer. A copper conductor fills the first trench/via. An electromigration inhibiting barrier layer is selectively located over a surface of the copper conductor and not any other remaining exposed surface. An insulating cap layer overlies the barrier layer and the remaining exposed surface. A second dielectric layer overlies the insulating cap layer. A second trench/via is located in the second dielectric layer and extends through the insulating cap layer and the barrier layer. A micro-trench is located within the first dielectric layer and is associated with the formation of the second trench/via. The micro-trench exposes a portion of the copper conductor. A filler fills the micro-trench. The filler is formed from a material used to form the electromigration inhibiting barrier layer.
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Fourson George
Mayer & Williams PC
Mayer, Esq. Stuart H.
Sony Corporation
Sony Electronics Inc.
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