Methods of erasing flash memory devices by applying wordline...

Details Methods of erasing flash memory devices by applying wordline... Methods of erasing flash memory devices by applying wordline...

2008-07-08

2008-07-08

Mai, Son L. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185230, C365S185270, C365S185330

Reexamination Certificate

active

07397706

ABSTRACT:
Methods of erasing data in a flash memory device are provided in which a plurality of wordline bias voltages are generated that include wordline bias voltages having at least two different levels, erasing data by applying the different wordline bias voltages to respective ones of a plurality of wordlines while applying an erasing voltage to a bulk region of memory cells, and verifying the erased states of the memory cells. Pursuant to these methods, the spread of the threshold-voltage distribution profile that may result from deviations of erasure-coupling ratios between memory cells may be reduced.

REFERENCES:
patent: 5270980 (1993-12-01), Pathak et al.
patent: 5406521 (1995-04-01), Hara
patent: 5532971 (1996-07-01), Tanaka et al.
patent: 5917757 (1999-06-01), Lee et al.
patent: 6160739 (2000-12-01), Wong
patent: 6160740 (2000-12-01), Cleveland
patent: 6359810 (2002-03-01), Gupta et al.
patent: 6407947 (2002-06-01), Ahn et al.
patent: 6507522 (2003-01-01), Lee et al.
patent: 6594178 (2003-07-01), Choi et al.
patent: 6618292 (2003-09-01), Sakui
patent: 6807103 (2004-10-01), Cavaleri et al.
patent: 6818491 (2004-11-01), Lee et al.
patent: 6853582 (2005-02-01), Matsuda et al.
patent: 6958936 (2005-10-01), Quader et al.
patent: 2005/0232013 (2005-10-01), Kawai et al.
patent: 2007/0047327 (2007-03-01), Goda et al.
patent: 2002-025283 (2002-01-01), None
patent: 2002-150782 (2002-05-01), None
patent: 2002-216487 (2002-08-01), None
patent: 2004-171686 (2004-06-01), None
patent: 2005-025824 (2005-01-01), None
patent: 2000-0044942 (2000-07-01), None
patent: 10-2002-0001251 (2002-01-01), None
patent: 2003-0043798 (2002-03-01), None
patent: 10-2002-0042756 (2002-06-01), None
patent: 10-2002-0060339 (2002-07-01), None
patent: 2003-43798 (2003-06-01), None
Notice to File a Response/Amendment to the Examination Report for Korean Patent Application No. 2005-50471; date of mailing Feb. 8, 2007.
English translation of Notice to File a Response/Amendment to the Examination Report for Korean Patent Application No. 2005-50471; date of mailing Feb. 8, 2007.

Affiliated with

Also associated with

Rating

Methods of erasing flash memory devices by applying wordline... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of erasing flash memory devices by applying wordline..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of erasing flash memory devices by applying wordline... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2804828