Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2008-07-01

2008-07-01

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C438S680000, C438S723000

Reexamination Certificate

active

07393778

ABSTRACT:
A semiconductor device and a method for fabricating the same in which a protective oxide layer is formed on an insulating interlayer gap are disclosed. An example semiconductor device includes a semiconductor substrate having lower structures, an insulating interlayer on the semiconductor substrate to cover the lower structures, and an SiH4-oxide layer on the insulating interlayer. The SiH4-oxide has hydrogen constituents removed by displacement to prevent an amorphous material layer from being formed on the insulating interlayer. The example semiconductor device includes a contact hole in the insulating interlayer and the SiH4-oxide layer for exposing predetermined portions of the lower structures. Additionally, the example semiconductor device includes a contact plug formed inside the contact hole to electrically connect the lower structures with a metal line.

REFERENCES:
patent: 6194304 (2001-02-01), Morozumi et al.
patent: 6245659 (2001-06-01), Ushiyama
patent: 6326287 (2001-12-01), Asahina et al.
patent: 6331494 (2001-12-01), Olson et al.
patent: 2004/0266106 (2004-12-01), Lee

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