Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-06-03
2008-06-03
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S290000, C257S291000, C257S233000, C257S234000, C257S258000
Reexamination Certificate
active
07382009
ABSTRACT:
To provide an amplification type solid state image pickup device enabling lower noise, higher gain, and higher sensitivity than any conventional amplification type solid state image pickup device. A solid state image pickup device according to the present invention includes an arrangement of a plurality of unit pixels each of which includes at least: a photodiode for accumulating a signal charge generated by an incident light; and an amplifying MOS transistor receiving the signal charge at a control electrode, amplifying the signal charge and outputting an amplified signal, wherein: the amplifying MOS transistor is formed in a first semiconductor layer of a first conductivity type which is the same conductivity type as source and drain of the amplifying MOS transistor, the first semiconductor layer has an impurity concentration lower than that of the source and drain, and the first semiconductor layer is depleted between the source and drain at least during an amplifying operation of the amplifying MOS transistor.
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Foreign Official Communication dated Apr. 6, 2007, regarding Foreign Counterpart Application 2004100562397.
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Lewis Monica
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