Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-22
2008-07-22
Pham, Hoai v (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S406000, C257S411000, C257SE27060
Reexamination Certificate
active
07402873
ABSTRACT:
A method for manufacturing a semiconductor integrated circuit device including a first field effect transistor having a gate insulating film formed over a first element forming region of a main surface of a semiconductor substrate; and a second field effect transistor having a gate insulating film formed over a second element forming region of the main surface of the semiconductor substrate and made thinner than the gate insulating film of the first field effect transistor. The method comprises the steps of forming a thermally oxidized film over a first element forming region and a second element forming region of the main surface of the semiconductor substrate; forming a deposited film over the main surface of the semiconductor substrate including said thermally oxidized film; removing the deposited film and said thermally oxidized film from over the second element forming region; and forming a thermally oxidized film over the second element forming region to form a gate insulating film individually over the first element forming region and the second element forming region.
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Office Action dated Sep. 28, 2004, in corresponding Japanese Patent Application No. Hei 9-338586.
Shukuri Shoji
Suzuki Norio
Taniguchi Yasuhiro
Antonelli, Terry Stout & Kraus, LLP.
Pham Hoai v
Renesas Technology Corp.
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