Local interconnect structure and method for a CMOS image sensor

Details Local interconnect structure and method for a CMOS image sensor Local interconnect structure and method for a CMOS image sensor

2008-03-18

2008-03-18

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257S293000

Reexamination Certificate

active

07345330

ABSTRACT:
A self-aligned silicide (salicide) process is used to form a local interconnect for a CMOS image sensor consistent with a conventional CMOS image sensor process flow. An oxide layer is deposited over the pixel array of the image sensor. Portions of the oxide layer is removed and a metal layer is deposited. The metal layer is annealed to form a metal silicide. Optionally, a protective oxide layer is then deposited.

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European Search Report for European Patent application EP 05 25 7099, completed Mar. 21, 2006, 2 pages.

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