Thin film resistor integration in a dual damascene structure

Details Thin film resistor integration in a dual damascene structure Thin film resistor integration in a dual damascene structure

2008-01-29

2008-01-29

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S380000, C257S536000, C257S537000, C438S383000, C438S384000, C438S618000, C438S622000, C438S638000

Reexamination Certificate

active

07323751

ABSTRACT:
A thin film resistor and at least one metal interconnect are formed in an integrated circuit. A first dielectric layer is formed over a metal interconnect layer. A thin film resistor is formed on the first dielectric layer and a second dielectric layer formed over the thin film resistor. Thin film resistor vias and the at least one trench are formed concurrently in the second dielectric layer. A trench via is then formed in the at least one trench. The trench via, the at least one trench and the thin film resistor vias are filled with a contact material layer to form thin film resistor contacts and at least one conductive line coupled to the metal interconnect layer.

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