Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-07-08
2008-07-08
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C438S462000
Reexamination Certificate
active
07397834
ABSTRACT:
The nitride semiconductor laser device has a counter electrode structure where contact resistance is reduced and manufacturing methods thereof are provided. The nitride semiconductor laser device comprises a nitride semiconductor substrate having a first main surface and a second main surface. A nitride semiconductor layer is stacked on the first main surface of the nitride semiconductor substrate. A ridge-shaped stripe is formed in the nitride semiconductor layer, and a resonance surface forms an optical waveguide in the direction perpendicular to the length of the ridge-shaped stripe. A first region having a crystal growth facet in the (0001) plane and a second region on the first main surface or the second main surface are provided. Further, a recess is formed in the second region of the first main surface and/or the second main surface. A ridge-shape stripe is formed over the first main surface of the nitride semiconductor substrate.
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patent: 2003/0123503 (2003-07-01), Matsumoto et al.
Shuji Nakamura et al., High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates, Japanese Journal of Applied Physics, Mar. 1998, pp. L309-L312, vol. 37, Part 2, No. 3B, The Japan Society of Applied Physics and The Physical Society of Japan.
Zheleva, T. et al., “Dislocation Density Reduction Via Lateral Expitaxy in Selectively Grown GaN Structures”, Applied Physics Letters, pp. 2472-2474, Oct. 1997, vol. 71, No. 17, American Institute of Physics, New York, U.S.A.
Kozaki Tokuya
Matsumura Hiroaki
Sakamoto Keiji
Golub Marcia A.
Harvey Minsun
Nichia Corporation
Smith Patent Office
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