Semiconductor device having an SOI structure and method for...

Details Semiconductor device having an SOI structure and method for... Semiconductor device having an SOI structure and method for...

2008-05-20

2008-05-20

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S758000, C257SE27112

Reexamination Certificate

active

07375397

ABSTRACT:
There is provided a semiconductor device in which the characteristic variations of a transistor and the degradation of a gate oxide layer are reduced during a WP process and a method for manufacturing the same. The semiconductor device includes a semiconductor chip having an SOI transistor. The SOI transistor includes a semiconductor layer comprising device isolating regions, a channel region, and diffusion regions that sandwich the channel region therebetween. The semiconductor layer is formed on a support substrate via a first insulating layer. A gate electrode is formed on the channel region of the semiconductor layer via a second insulating layer. The semiconductor chip has, on the first surface, a first electrode pad electrically connected to the SOI transistor and a second electrode pad electrically connected to the support substrate.

REFERENCES:
patent: 5696403 (1997-12-01), Rostoker et al.
patent: 2004/0207014 (2004-10-01), Kishiro
patent: 2004/0253798 (2004-12-01), Mori

Affiliated with

Also associated with

Rating

Semiconductor device having an SOI structure and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having an SOI structure and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an SOI structure and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2793423