Silicon precursors to make ultra low-K films of K<2.2...

Details Silicon precursors to make ultra low-K films of K<2.2... Silicon precursors to make ultra low-K films of K<2.2...

2011-08-16

2011-08-16

Parker, Frederick (Department: 1712)

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

C427S248100, C427S255230

Reexamination Certificate

active

07998536

ABSTRACT:
A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

REFERENCES:
patent: 3560435 (1971-02-01), Lee
patent: 5118530 (1992-06-01), Hanneman et al.
patent: 6541367 (2003-04-01), Mandal
patent: 6596655 (2003-07-01), Cheung et al.
patent: 6897163 (2005-05-01), Gaillard et al.
patent: 7122880 (2006-10-01), Peterson et al.
patent: 7229934 (2007-06-01), Dubois et al.
patent: 7297376 (2007-11-01), Yim et al.
patent: 2001/0049203 (2001-12-01), Kim et al.
patent: 2002/0142579 (2002-10-01), Vincent et al.
patent: 2003/0017642 (2003-01-01), Conti et al.
patent: 2003/0232137 (2003-12-01), Vrtis et al.
patent: 2004/0048960 (2004-03-01), Peterson et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0175501 (2004-09-01), Lukas et al.
patent: 2005/0130404 (2005-06-01), Moghadam et al.
patent: 2005/0161060 (2005-07-01), Johnson et al.
patent: 2005/0194619 (2005-09-01), Edelstein et al.
patent: 2005/0215072 (2005-09-01), Kevwitch et al.
patent: 2006/0071607 (2006-04-01), Chen et al.
patent: 2006/0249713 (2006-11-01), Peterson et al.
patent: 2006/0249818 (2006-11-01), Peterson et al.
patent: 2006/0276054 (2006-12-01), Lakshmanan et al.
patent: 2007/0079753 (2007-04-01), Padhi et al.
patent: 2007/0117408 (2007-05-01), Nguyen et al.
patent: 2007/0161256 (2007-07-01), Gates et al.
patent: WO-2005078155 (2005-08-01), None
International Search Report and Written Opinion of the International Searching Authority Dated Sep. 8, 2008 (PCT/US08/67487).
Sugahara et al., “A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application.” Jpn. J. Appl. Phys. vol. 38 (1999) pp. 1428-1432.
PCT International Search Report and Written Opinion dated Feb. 22, 2010, in International Application Serial No. PCT/US2009/051983.
USPTO Office Action dated Feb. 19, 2010, in U.S. Appl. No. 12/183,915.

Affiliated with

Also associated with

Rating

Silicon precursors to make ultra low-K films of K<2.2... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon precursors to make ultra low-K films of K<2.2..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon precursors to make ultra low-K films of K<2.2... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2787267