Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

2008-05-27

2008-05-27

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S221000, C257S327000, C257S347000, C257S401000, C257S408000

Reexamination Certificate

active

07378714

ABSTRACT:
In a complete depletion type SOI transistor, the roll-off of a threshold value is suppressed, independently from the formation of an SOI film to be thinner. As for a semiconductor device (1), the impurity concentration in a channel formation portion (10) is implanted not uniformly along the length direction of a gate (2) in the complete depletion type silicon on insulation (SOI) transistor. In other words, high concentration regions (11) where impurity concentrations are higher than that at a central portion in the end parts of the channel formation portion (10) on the side of a source (4) and a drain (5).

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