Resist material and pattern formation method

Details Resist material and pattern formation method Resist material and pattern formation method

2008-03-04

2008-03-04

Visconti, Geraldina (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S311000, C430S325000

Reexamination Certificate

active

07338743

ABSTRACT:
A resist material includes a first polymer in which part of alkali-soluble groups are protected by an acid labile group labilized by an acid; a second polymer in which substantially all alkali-soluble groups are protected by an acid labile group labilized by an acid; and an acid generator.

REFERENCES:
patent: 6506534 (2003-01-01), Nozaki et al.
patent: 2001/0016298 (2001-08-01), Nakanishi et al.
Switkes, M. et al., “Immersion lithography at 157 nm” J. Vac. Sci. Technol., vol. B19(6), Nov./Dec. 2001, pp. 2353-2356.

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