Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2011-03-29

2011-03-29

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S392000, C257SE27060, C257SE27062

Reexamination Certificate

active

07915687

ABSTRACT:
A semiconductor device includes: a first gate insulating film on a first region of a semiconductor substrate; a first gate electrode on the first gate insulating film; a second gate insulating film on a second region of the semiconductor substrate; and a second gate electrode on the second gate insulating film. The first gate insulating film includes a first insulating film composed of a first material containing a first metal, and the second gate insulating film includes a second insulating film composed of the first material and a second material containing a second metal.

REFERENCES:
patent: 7030024 (2006-04-01), Ho et al.
patent: 2005/0098839 (2005-05-01), Lee et al.
patent: 2005/0253181 (2005-11-01), Kimizuka et al.
patent: 2007/0178634 (2007-08-01), Jung et al.
patent: 2009/0114996 (2009-05-01), Inumiya et al.
patent: 2010/0059833 (2010-03-01), Yu et al.
Song, S.C. et al., “Highly Manufacturable 45nm LSTP CMOSFETs Using Novel Dual High-k and Dual Metal Gate CMOS Integration,” VLSI, 2006, pp. 16-17.

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