Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000
Reexamination Certificate
active
07911008
ABSTRACT:
A planar pass gate NFET is designed with the same width as a planar pull-down NFET. To optimize a beta ratio between the planar pull-down NFET and an adjoined planar pass gate NFET, the threshold voltage of the planar pass gate NFET is increased by providing a different high-k metal gate stack to the planar pass gate NFET than to the planar pull-down NFET. Particularly, a threshold voltage adjustment dielectric layer, which is formed over a high-k dielectric layer, is preserved in the planar pass gate NFET and removed in the planar pull-down NFET. The combined NFET active area for the planar pass gate NFET and the planar pull-down NFET is substantially rectangular, which enables a high fidelity printing of the image of the combined NFET active area by lithographic means.
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Chen Xiangdong
Ko Shang-Bin
Park Dae-gyu
International Business Machines - Corporation
Menz Douglas M
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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