Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-01
2011-03-01
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S296000, C257S301000, C257S303000, C257S304000, C257SE27096, C438S249000
Reexamination Certificate
active
07898014
ABSTRACT:
Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures. The semiconductor structure comprises first and second doped regions of a first conductivity type defined in the semiconductor material of a substrate bordering a sidewall of a trench. An intervening region of the semiconductor material separates the first and second doped regions. A third doped region is defined in the semiconductor material bordering the sidewall of the trench and disposed between the first and second doped regions. The third doped region is doped to have a second conductivity type opposite to the first conductivity type. Methods for forming the doped regions involve depositing either a layer of a material doped with both dopants or different layers each doped with one of the dopants in the trench and, then, diffusing the dopants from the layer or layers into the semiconductor material bordering the trench sidewall.
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Office Action issued in related U.S. Appl. No. 11/876,116 dated Oct. 1, 2009.
Cheng Kangguo
Hsu Louis Lu-Chen
Mandelman Jack Allan
International Business Machines - Corporation
Lin John
Warren Matthew E
Wood Herron & Evans LLP
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