Magnetic memory arrays

Details Magnetic memory arrays Magnetic memory arrays

2008-07-08

2008-07-08

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C257S422000, C365S214000, C365S210100, C365S209000, C365S210130

Reexamination Certificate

active

07397694

ABSTRACT:
A magnetic memory array. A first bit line provides a first writing magnetic field to a magnetic memory cell. A second bit line provides a second writing magnetic field to a reference magnetic memory cell. A word line provides a third writing magnetic field to the magnetic memory cell and a fourth writing magnetic field to the reference magnetic memory cell. The third writing magnetic field exceeds the fourth writing magnetic field.

REFERENCES:
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patent: 6740947 (2004-05-01), Bhattacharyya et al.
patent: 6803274 (2004-10-01), Sharma et al.
patent: 2006/0023494 (2006-02-01), Jeong et al.
patent: 2007/0165451 (2007-07-01), Leung

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