Stacked thin film transistor, non-volatile memory devices...

Details Stacked thin film transistor, non-volatile memory devices... Stacked thin film transistor, non-volatile memory devices...

2011-08-16

2011-08-16

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S649000, C257SE21170, C257SE21320, C257SE21210, C257SE21267, C257SE21293, C257SE21411, C257SE21646

Reexamination Certificate

active

07999295

ABSTRACT:
A manufacturing method for stacked, non-volatile memory devices provides a plurality of bitline layers and wordline layers with charge trapping structures. The bitline layers have a plurality of bitlines formed on an insulating layer, such as silicon on insulator technologies. The wordline layers are patterned with respective pluralities of wordlines and charge trapping structures orthogonal to the bitlines.

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