Semiconductor memory device having ferroelectric capacitors...

Details Semiconductor memory device having ferroelectric capacitors... Semiconductor memory device having ferroelectric capacitors...

2008-07-15

2008-07-15

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257S636000, C257SE21663, C257SE21664, C438S003000

Reexamination Certificate

active

07400005

ABSTRACT:
A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

REFERENCES:
patent: 6982444 (2006-01-01), Kanaya et al.
patent: 7001821 (2006-02-01), Aggarwal et al.
patent: 2002/0006674 (2002-01-01), Ma et al.
patent: 2005/0012126 (2005-01-01), Udayakumar et al.
patent: 2003-51582 (2003-02-01), None
patent: 2003-68987 (2003-03-01), None
U.S. Appl. No. 11/142,441, filed Jun. 2, 2005, Kumura et al.
U.S. Appl. No. 11/288,204, filed Nov. 29, 2005, Kumura et al.
U.S. Appl. No. 11/276,781, filed Mar. 14, 2006, Kanaya.

Affiliated with

Also associated with

Rating

Semiconductor memory device having ferroelectric capacitors... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having ferroelectric capacitors..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having ferroelectric capacitors... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2778676