Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-15
2008-01-15
Purvis, Sue A. (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S409000, C438S399000, C257S003000, C257S013000, C257S014000, C257SE21577, C977S781000, C977S893000
Reexamination Certificate
active
07319069
ABSTRACT:
A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths. The minute structure comprising pores comprises a) a substrate, b) a plurality of electroconductive layers formed on a surface of the substrate, c) a layer primarily composed of aluminum oxide covering the plurality of electroconductive layers and a surface of the substrate where no electroconductive layer is formed, and d) a plurality of pores formed in the layer primarily composed of aluminum oxide, in which the pores are disposed above the electroconductive layers and the surface of the substrate where no electroconductive layers is formed, with a part of the layer primarily composed of aluminum oxide provided under the bottoms of the pores, and in which the layer primarily composed of aluminum oxide provided between the electroconductive layer and the bottoms of the pores disposed above the electroconductive layer comprises a material forming the electroconductive layer.
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Den Tohru
Iwasaki Tatsuya
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Purvis Sue A.
Wilson Scott R.
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