Sidewall graphene devices for 3-D electronics

Semiconductor device manufacturing: process – Making field effect device having pair of active regions...

Reexamination Certificate

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C438S164000, C438S197000, C438S259000, C257SE21400

Reexamination Certificate

active

07993986

ABSTRACT:
A device is provided that includes a structure having a sidewall surface, a layer of material provided on the sidewall surface, and a device structure provided in contact with the layer of material. Fabrication techniques includes a process that includes forming a structure having a sidewall surface, forming a layer of material on the sidewall surface, and forming a device structure in contact with the layer of material, where the device structure and the layer of material are components of a device.

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