Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-01-08
2008-01-08
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S774000, C257S775000, C257SE29151, C257SE27131
Reexamination Certificate
active
07317208
ABSTRACT:
A plurality of gate lines are formed on a substrate. After depositing a gate insulating layer, a semiconductor layer and a doped amorphous silicon layer are sequentially formed thereon. A lower insulating layer made of silicon nitride and an upper insulating layer made of a photosensitive organic material are deposited thereon after forming data lines and drain electrodes. The upper insulating layer is patterned to form an unevenness pattern on its surface and contact holes on the drain electrodes. The lower insulating layer is patterned together with the gate insulating layer using a photoresist pattern having apertures located in the contact holes to form other contact holes respectively exposing the drain electrodes, portions of the gate lines, and portions of the data lines. After forming transparent electrodes and contact assistants respectively connected to the drain electrodes and the gate and the data lines through the contact holes, reflecting electrodes having apertures are formed on the transparent electrodes.
REFERENCES:
patent: 5801079 (1998-09-01), Takaishi
patent: 5874756 (1999-02-01), Ema et al.
patent: 6060352 (2000-05-01), Sekiguchi et al.
patent: 6083826 (2000-07-01), Kim et al.
patent: 6130450 (2000-10-01), Kohyama et al.
patent: 6271543 (2001-08-01), Ohtani et al.
patent: 6300244 (2001-10-01), Itabashi et al.
patent: 6407782 (2002-06-01), Kim
patent: 6414730 (2002-07-01), Akamatsu et al.
patent: 6660549 (2003-12-01), Yamazaki et al.
patent: 6764886 (2004-07-01), Yamazaki et al.
patent: 6828568 (2004-12-01), Suzuki et al.
patent: 6861368 (2005-03-01), Chae
patent: 2001/0025958 (2001-10-01), Yamazaki et al.
patent: 1290922 (2001-04-01), None
patent: 60178660 (1985-09-01), None
patent: 05173058 (1993-07-01), None
patent: 06273800 (1994-09-01), None
patent: 09129882 (1997-05-01), None
patent: 11281992 (1999-10-01), None
patent: 11312810 (1999-11-01), None
patent: 2000003913 (2000-01-01), None
patent: 2000122094 (2000-04-01), None
patent: 2001007203 (2001-01-01), None
patent: 2001032086 (2001-02-01), None
patent: 2001042355 (2001-02-01), None
patent: 1020000031459 (2000-06-01), None
patent: 1020010046652 (2001-06-01), None
patent: 1020010107088 (2001-12-01), None
English Abstract for Publication No. 1020010107088.
English Abstract for Publication No. 2000003913.
English Abstract for Publication No. 60178660.
English Abstract for Publication No. 2001007203
English Abstract for Publication No. 09129882.
English Abstract for Publication No. 2000122094.
English Abstract for Publication No. 11312810.
English Abstract for Publication No. 11281992.
English Abstract for Publication No. 1020000031459.
English Abstract for Publication No. CN1290922.
English Abstract for Publication No. 2001032086.
English Abstract for Publication No. 1020010046652.
English Abstract for Publication No. 05173058.
English Abstract for Publication No. 2001042355.
English Abstract for Publication No. 06273800.
F. Chau & Associates LLC
Mandala Jr. Victor A.
Purvis Sue A.
Samsung Electronics Co,. Ltd.
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