Semiconductor integrated circuit device including a pad and...

Details Semiconductor integrated circuit device including a pad and... Semiconductor integrated circuit device including a pad and...

2011-08-30

2011-08-30

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C361S091100, C257SE27015, C438S170000

Reexamination Certificate

active

08008727

ABSTRACT:
To reduce the leak current in the MOSFET connected between the pad and the ground. There are provided a pad PAD for an input or output signal, an n-type MOSFET M1aconnected between the pad PAD and the ground and having its gate terminal and backgate connected in common, and a potential control circuit10that controls a potential Vb of the gate terminal and the backgate of the n-type MOSFET M1abased on a potential Vin of the pad PAD. The potential control circuit10comprises n-type MOSFETs M2and M3; the n-type MOSFET M1ahas its gate terminal and backgate connected to backgates and drains of the n-type MOSFETs M2and M3; the n-type MOSFET M2has its source grounded and its gate terminal connected to the pad PAD via a resistance R; and the n-type MOSFET M3has its source connected to the pad PAD and its gate terminal grounded.

REFERENCES:
patent: 6399990 (2002-06-01), Brennan et al.
patent: 2002/0070408 (2002-06-01), Schnaitter
patent: 7-147381 (1995-06-01), None

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