Self refresh operation of semiconductor memory device

Details Self refresh operation of semiconductor memory device Self refresh operation of semiconductor memory device

2011-08-16

2011-08-16

Phan, Trong (Department: 2827)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S189070, C365S189120, C365S226000, C365S230030, C365S240000

Reexamination Certificate

active

08000164

ABSTRACT:
A method for driving a semiconductor memory device, includes initializing first data corresponding to a refresh time of each corresponding row included in a cell array; storing second data corresponding to column data included in the first row after entering a self refresh mode; setting the first data corresponding to the first row by detecting the refresh time of the first row while performing refresh operations on the other rows in the cell array according to a refresh period selected based on the corresponding first data for predetermined refresh cycles, wherein the refresh operation is not performed on the first row during the predetermined refresh cycles; restoring the second data to the first row; and repeating the above steps for the other rows to thereby set the corresponding first data until the setting step is completed for all rows or the self refresh mode expires.

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