Phase change memory devices having phase change area in...

Details Phase change memory devices having phase change area in... Phase change memory devices having phase change area in...

2008-01-29

2008-01-29

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S001000, C257S002000, C257S004000, C257S005000, C257S296000, C257S297000, C257S298000, C257S299000, C257S300000, C257S310000, C257S311000, C257S312000, C257S313000

Reexamination Certificate

active

07323708

ABSTRACT:
A phase change memory device includes a lower electrode and a porous dielectric layer having fine pores on the lower electrode. A phase change layer is provided in the fine pores of the porous dielectric layer. An upper electrode is provided on the phase change layer. Related manufacturing methods are also described.

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