Insulated gate transistor incorporating diode

Details Insulated gate transistor incorporating diode Insulated gate transistor incorporating diode

2011-08-30

2011-08-30

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S330000

Reexamination Certificate

active

08008711

ABSTRACT:
A p-type base layer shaped like a well is formed for each of IGBT cells, and a p+-type collector layer and an n+-type cathode layer are formed on a surface opposite to a surface on which the p-type base layer is formed so as to be situated just below the p-type base layer. The p-type base layer of each of the IGBT cells includes a flat region including an emitter region and a bottom surface penetrated by a main trench, and first and second side diffusion regions between which the flat region is interposed. The first side diffusion region is situated just above the n+-type cathode layer and each of the bottom surfaces of the side diffusion regions forms a parabola-shaped smooth curve in longitudinal section. By replacing the p+-type collector layer with the n+-type cathode layer, it is possible to apply features of the above structure to a power MOSFET.

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