Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-03-22
2011-03-22
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C438S199000
Reexamination Certificate
active
07910931
ABSTRACT:
A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer is arranged on the drain electrode, and it has a contact hole that partially exposes the extended portion of the drain electrode without exposing a step in the extended portion caused by the storage electrode or storage electrode line. A pixel electrode is arranged on the passivation layer and is electrically connected with the extended portion of the drain electrode through the contact hole.
REFERENCES:
patent: 6130443 (2000-10-01), Hong et al.
patent: 7009206 (2006-03-01), Lee et al.
patent: 2004/0238823 (2004-12-01), Lee et al.
Kim Hyuk-Jin
Kim Kyung-Wook
H.C. Park & Associates PLC
Samsung Electronics Co,. Ltd.
Vu David
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