Method for structuring a semiconductor device

Details Method for structuring a semiconductor device Method for structuring a semiconductor device

2008-04-15

2008-04-15

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21230, C257SE21203, C438S705000, C438S661000

Reexamination Certificate

active

07358181

ABSTRACT:
A method for structuring a laterally extending first layer in a semiconductor device with the aid of a reactive second layer, which together with the first layer to be structured forms first reaction products, which products are removed by material removal that acts selectively on the first reaction products, whereby the structuring takes place in a vertical direction.

REFERENCES:
patent: 4818723 (1989-04-01), Yen
patent: 5587338 (1996-12-01), Tseng
patent: 6211044 (2001-04-01), Xiang et al.
patent: 2002/0187606 (2002-12-01), Drynan

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