CMOS image sensor and method for fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S291000, C257S293000, C257S332000

Reexamination Certificate

active

07405437

ABSTRACT:
A CMOS image sensor includes a first conductive type semiconductor substrate defined by a photodiode area and a transistor area, a trench formed in the semiconductor substrate corresponding to a transfer transistor of the transistor area, a gate electrode of the transfer transistor, formed in the trench, a second conductive type impurity ion area formed in the semiconductor substrate of the photodiode area, and a first conductive type impurity ion area formed on a surface of the second conductive type impurity ion area.

REFERENCES:
patent: 5926693 (1999-07-01), Gardner et al.
patent: 6037629 (2000-03-01), Gardner et al.
patent: 6504193 (2003-01-01), Ishiwata et al.
patent: 6838298 (2005-01-01), Lee
patent: 6897082 (2005-05-01), Rhodes et al.
patent: 7187018 (2007-03-01), Mouli et al.
patent: 2003/0173603 (2003-09-01), Shim
patent: 2003/0228736 (2003-12-01), Kimura
patent: 2004/0092054 (2004-05-01), Mouli et al.
patent: 2004/0262609 (2004-12-01), Mouli et al.
patent: 2005/0179059 (2005-08-01), Rhodes et al.
patent: 10-2003-0000654 (2003-01-01), None
patent: 2003-0000654 (2003-01-01), None

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