Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2011-03-29
2011-03-29
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S951000, C257S040000, C257S088000, C257SE33065, C257SE51018, C257SE51033
Reexamination Certificate
active
07915074
ABSTRACT:
A method of manufacturing a thin film transistor (“TFT”) array panel includes forming a first conductive layer, gate insulating layer, and first insulating layer on a substrate, patterning the first insulating layer to form a first insulating pattern including an opening, etching the gate insulating layer and first conductive layer to form a gate insulating member and a gate line, forming an organic semiconductor in the opening, forming a passivation layer and a second insulating pattern thereon, patterning the second insulating layer to form a second insulating pattern, etching the passivation layer, depositing a second conductive layer thereon, forming a pixel electrode by removing the second insulating pattern and the second conductive layer deposited on the second insulating pattern, and forming a drain electrode and a data line by depositing and patterning a third conductive layer on the resultant structure.
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Cantor & Colburn LLP
Lee Hsien-Ming
Parendo Kevin
Samsung Electronics Co,. Ltd.
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