Thin film transistor with 10-15% hydrogen content

Details Thin film transistor with 10-15% hydrogen content Thin film transistor with 10-15% hydrogen content

1989-03-27

1992-03-03

James, Andrew J.

Fishing, trapping, and vermin destroying

357 2, 357 4, 437 2, 437 24, H01L 2701, H01L 2713, H01L 2978, H01L 4500

Patent

active

050937030

ABSTRACT:
A thin film transistor includes a glass substrate on a surface of which a hydrogenated amorphous silicon (a-Si:H) film is formed. On the a-Si:H film, a source electrode and a drain electrode are respectively formed with a suitable interval between them. A gate electrode is formed positioned between the source electrode and the drain electrode. Insulation film is interposed between the gate electrode and the a-Si:H film. In a direct photo-CVD method using a low pressure mercury lamp, bandtail characteristics energy of the a-Si:H film is made less than 40 meV by controlling a decomposition region of a reaction gas, that is, the distance between the glass substrate and a gas supply port, whereby a thin film transistor having a good response is obtainable.

REFERENCES:
patent: 4582721 (1986-04-01), Yoshino et al.
patent: 4693759 (1987-09-01), Noguchi et al.

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