Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2011-08-09
2011-08-09
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S226000, C365S227000
Reexamination Certificate
active
07995407
ABSTRACT:
A semiconductor memory device comprising a regular cell array that includes a regular memory cell to which one of a first power supply voltage and a second power supply voltage is supplied and to which a third power supply voltage is supplied, a redundant cell array that includes a redundant memory cell to which one of the first power supply voltage and the second power supply voltage is supplied and to which the third power supply voltage is supplied, and a power supply control circuit that controls supply of the first power supply voltage and the second power supply voltage to the regular cell array and the redundant cell array, wherein a difference between the second power supply voltage and the third power supply voltage is smaller than a difference between the first power supply voltage and the third power supply voltage.
REFERENCES:
patent: 6333877 (2001-12-01), Nagaoka et al.
patent: 2007/0002662 (2007-01-01), Yamagami et al.
patent: 2001-195893 (2001-07-01), None
Arent & Fox LLP
Fujitsu Semiconductor Limited
Hoang Huan
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