Method and process intermediate for electrostatic discharge...

Details Method and process intermediate for electrostatic discharge... Method and process intermediate for electrostatic discharge...

2008-01-29

2008-01-29

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C257SE21411

Reexamination Certificate

active

07323372

ABSTRACT:
Shorting bars are provided for electrostatic discharge protection as a portion of trace deposition in a photodiode array. During normal processing for etching of the metal layers, the shorting bars are removed without additional processing requirements. Additional shorting elements are provided by employing FET silicon layers having traces in contact with the array traces to provide extended ESD protection until removal of those shorting elements during normal processing for opening vias for photodiode bottom contact.

REFERENCES:
patent: 6927420 (2005-08-01), Kim

Affiliated with

Also associated with

Rating

Method and process intermediate for electrostatic discharge... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and process intermediate for electrostatic discharge..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and process intermediate for electrostatic discharge... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2754187