Semiconductor device having recess gate

Details Semiconductor device having recess gate Semiconductor device having recess gate

2011-03-01

2011-03-01

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S283000, C257S284000, C257S332000, C257S333000, C257SE29200, C257SE21429

Reexamination Certificate

active

07898025

ABSTRACT:
A semiconductor device having a recess gate includes a semiconductor substrate having a recess, a conductive pattern for a gate electrode filled into the recess, and having an extension portion protruding higher than a surface of the semiconductor substrate, an epitaxial semiconductor layer having a top surface disposed over the semiconductor substrate, and a gate insulating layer disposed between the epitaxial semiconductor layer and the conductive pattern, and between the semiconductor substrate and the conductive pattern. Further, a method of fabricating the same is disclosed.

REFERENCES:
patent: 6667227 (2003-12-01), Liu et al.
patent: 6677205 (2004-01-01), Beintner
patent: 2004/0124461 (2004-07-01), Gajda
patent: 2005/0001266 (2005-01-01), Kim
patent: 2005/0020086 (2005-01-01), Kim et al.
patent: 2006/0006410 (2006-01-01), Lee et al.
patent: 1794467 (2006-06-01), None
patent: 1999-000763 (1999-01-01), None
patent: 1020050119244 (2005-12-01), None
patent: 441022 (2001-06-01), None
patent: 495859 (2002-07-01), None
patent: 536746 (2003-06-01), None
Notice of Allowance for Korean Application 10-2006-0124735.
Chinese Office Action for corresponding Chinese patent application 200710096999.4.
Office Action together with Search Report dated Oct. 27, 2009, for Taiwanese application No. 95149448, citing the above references.
Chinese Patent Certificate and Publication of application No. 200710096999.4, citing the above refernce(s).

Affiliated with

Also associated with

Rating

Semiconductor device having recess gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having recess gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having recess gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2753530