Power semiconductor device

Details Power semiconductor device Power semiconductor device

2008-04-22

2008-04-22

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S341000, C257SE29201

Reexamination Certificate

active

07361954

ABSTRACT:
Disclosed is a power semiconductor device, including: a gate electrode having a cross section having a length in a vertical direction, and having a shape extending in a direction orthogonal to the cross section; a gate insulating film surrounding the gate electrode; an n-type source layer positioning to face the gate electrode via the gate insulating film; a p-type base layer adjacent to the n-type source layer and positioning to face the gate electrode via the gate insulating film; an n-type base layer adjacent to the p-type base layer and positioning to face the gate electrode via the gate insulating film without being in contact with the n-type source layer; and a main electrode being in contact with the n-type source layer and the p-type base layer with plural lateral planes extending in a direction crossing the direction in which the gate electrode is extending.

REFERENCES:
patent: 6278155 (2001-08-01), Okabe et al.
patent: 6359306 (2002-03-01), Ninomiya
patent: 6583010 (2003-06-01), Mo
patent: 6774408 (2004-08-01), Ninomiya
patent: 6777783 (2004-08-01), Matsuda
patent: 6891224 (2005-05-01), Ogura et al.
patent: 2006/0081919 (2006-04-01), Inoue et al.
patent: 1 065 710 (2001-01-01), None
patent: 2001-15743 (2001-01-01), None

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