Static magnetic field assisted resistive sense element

Details Static magnetic field assisted resistive sense element Static magnetic field assisted resistive sense element

2011-08-16

2011-08-16

Valentine, Jami M (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S422000, C257SE29323, C438S003000, C365S157000, C365S158000, C360S324200

Reexamination Certificate

active

07999337

ABSTRACT:
Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

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