Semiconductor device

Details Semiconductor device Semiconductor device

2008-04-15

2008-04-15

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S331000, C257SE29257, C257SE29260, C257SE21548

Reexamination Certificate

active

07358566

ABSTRACT:
A first main electrode is provided on one surface thereof. On the other surface thereof, a second semiconductor layer of the first conduction type and a third semiconductor layer of the second conduction type are arranged alternately along the surface. A fourth semiconductor layer of the second conduction type and a fifth semiconductor layer of the first conduction type are stacked on the surfaces of the second and third semiconductor layers. The semiconductor device further comprises a control electrode formed in a trench with an insulator interposed therebetween. The trench passes through the fourth and fifth semiconductor layers and reaches the second semiconductor layer. A sixth semiconductor layer of the first conduction type is diffused from the bottom of the trench. A second main electrode is connected to the fourth and fifth semiconductor layers.

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Yoshiyuki Hattori, et al., “Design of a 200V Super Junction MOSFET with n-buffer regions and its Fabrication by Trench Filling”, Proceedings of 2004 International Symposium on Power Semiconductor Devices & ICs, Kitakyushu, May 2004, pp. 189-192.

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